transient voltage suppressors for esd protection revision december 18 , 2013 1 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - hc un semiconductor co., ltd. www. unsemi .com .tw 0201/ d fn 0603 the esd 05v02 d - hc is a silicon base in ult ra small surface - mounted device (smd) special packages. it is designed to protect sensitive electronics from damage or latch up due to electrostatic discharge (esd), lightning, and other volt age induced transient events.tvs diode designed to protect one power/control line or one signal line from overvoltage hazard of electrostatic discharge (esd). ? bi - directi onal esd protection of one line ; ? response time <1ns; ? low clamping voltage; ? low leakage ; ? provides esd protection to iec61000 - 4 - 2(esd): 15kv (air discharge) 8kv (contact discharge); ? cell phone handsets and accessories ; ? microprocessor based equipment ; ? personal digital assistants (pdas) ; ? n otebooks (dvi/hdmi) desktops and servers ; ? portable instrumentation ; ? audio and video equipment ; ? digital camera; ? case:0201/ dfn 0603 package molded plastic. ? terminals: gold plated, solderable per mil - std - 750, m ethod 2026. ? polarity: color band denotes cathode end . ? mounting position: any ? reel size : 7 inc h symbol parameter value units ipp peak pulse current (tp=8/20us) 5 . 5 a t j operating junction temperature range - 55 to +125 oc t stg storage temperature range - 55 to +150 oc t l soldering temperature, t max = 10s 260 oc v esd iec61000 - 4 - 2 (esd) air discharge 1 5 min kv contact discharge 8 min mechanical characteristics d escription feature functional diagram applicatio ns mechanical data
transient voltage suppressors for esd protection revision december 18 , 2013 2 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - hc un semiconductor co., ltd. www. unsemi .com .tw characteristics symbol test conditions min. typ. max. unit reverse working voltage v rwm -- -- -- 5 v reverse breakdown voltage v br it=1ma 6 -- 9 v reverse leakage current i r v rwm =3.3v t=25 c -- -- 1 a positive clamping voltage v c1 i pp =3a t p =8/20 s -- 7.5 -- v capacitance between i/o and gnd c j2 v r =0v f=1mhz -- 15 20 pf electrical characteristics ( @ 25 unless otherwise specified ) characteristic curves 60ns 10% percent of peak pulse current % 30ns tr = 0.7~1ns time (ns) 90% 100% fig1. 8/20 s pulse wa veform fig2 . esd p ulse w aveform ( according to iec 61000 - 4 - 2 ) fig3. power derating curve
transient voltage suppressors for esd protection revision december 18 , 2013 3 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - hc un semiconductor co., ltd. www. unsemi .com .tw fig4. clamping voltage vs. peak pulse current fig 5 . capacitance between terminals characteristics characteristic curves 0201/ d fn 0603 package outline & dim ensions mechanical details land layout
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